@Article{ContinVaBaCaTrCo:2016:LaClSi,
author = "Contin, Andr{\'e} and Vasconcelos, G. de and Barquete, D. M. and
Campos, R. A. and Trava Airoldi, Vladimir Jesus and Corat, Evaldo
Jos{\'e}",
affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto
de Estudos Avan{\c{c}}ados (IEAv)} and {Universidade Estadual de
Santa Cruz (UESC)} and Instituto Federal de Educa{\c{c}}{\~a}o,
Ci{\^e}ncia e Tecnologia de S{\~a}o Paulo (IFSP) and {Instituto
Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de
Pesquisas Espaciais (INPE)}",
title = "Laser cladding of SiC multilayers for diamond deposition on steel
substrates",
journal = "Diamond and Related Materials",
year = "2016",
volume = "65",
pages = "105--114",
month = "May",
keywords = "Diamond film, HFCVD, Laser cladding.",
abstract = "It is well-known that growth and adhesion of polycrystalline
diamond coating directly on steel are both problematic. To solve
these issues, interlayers are needed. For the present study,
diamond film was deposited on steel with intermediate barrier of
silicon carbide (SiC). In addition, laser cladding process
produced interlayer. Diamond films were grown by Hot Filament
Chemical Vapor Deposition (HFCVD). During laser cladding process,
SiC was partially dissociated and so, formation of FeSi was
observed. Just 1-layer SiC was enough to grow diamond film since
the iron is no longer free to migrate to the surface during the
CVD deposition. Nevertheless, the high residual stress formed at
the interface, during the reactor cooling, produces fragmentation
of the diamond film grown with 1-layer SiC on the steel. To
overcome the disadvantage, we propose to create SiC multilayers in
an effort to reduce the influence of steel thermal expansion
coefficient. Detailed characterization of the SiC interlayer, FeSi
phase and diamond coating, are discussed based on X-ray
Diffraction, Scanning Electron Microscopy and Raman Spectroscopy.
Results showed that the presence of FeSi, formed by SiC
dissociation, was the main reason for diffusion barrier
effectiveness. Further, the use of SiC multilayers efficiently
relaxed the high thermal stress.",
doi = "10.1016/j.diamond.2016.02.007",
url = "http://dx.doi.org/10.1016/j.diamond.2016.02.007",
issn = "0925-9635",
language = "en",
targetfile = "contin_laser.pdf",
urlaccessdate = "27 abr. 2024"
}